1998. 6. 15 1/3 semiconductor technical data KTA1660 epitaxial planar pnp transistor revision no : 1 high voltage switching application. features high voltage : v ceo =-150v. high transition frequency : f t =120mhz(typ.). 1w (monunted on ceramic substrate). small flat package. complementary to ktc4372. maximum rating (ta=25 1 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -150 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -50 ma base current i b -10 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification o:70 140, y:120 240 p c * : KTA1660 mounted on ceramic substrate (250mm 2 x0.8t) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-150v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-5v, i c =-10ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma - - -0.8 v base-emitter voltage v be v ce =-5v, i c =-30ma - - -0.9 v transition frequency f t v ce =-30v, i c =-10ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 5.0 pf b type name h rank fe lot no. marking
1998. 6. 15 2/3 KTA1660 revision no : 1 collector current i (ma) h - i fe dc current gain h c i - v c ce ce collector-emitter voltage v (v) 0 -10 c 0 collector current i (ma) v - i ce(sat) c c collector current i (ma) -0.6 -0.03 ce(sat) collector-emitter saturation dc current gain h fe 500 -0.5 collector current i (ma) c c fe h - i -2 -4 -6 -8 -10 -12 -20 -30 -40 -50 common emitter ta=25 c i =-100 a b -200 a -300 a -500 a -1m a -2m a -1 -3 -10 -30 -100 10 30 50 100 300 common emitter ta=25 c v =-10v ce ce v =-5 v v = -2v ce c fe v =-5v common emitter 300 100 50 30 10 -100 -30 -10 -3 -1 -0.5 500 ta=100 c ta=25 c ta=-25 c collector-emitter saturation ce(sat) -0.6 collector current i (ma) c c ce(sat) v - i voltage v (v) -1 -3 -10 -30 -100 -300 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 ce common emitter ta=25 c i / i =20 c b i / i = 10 c b i / i = 5 c b voltage v (v) -1 -3 -10 -30 -100 -300 -0.03 -0.1 -0.05 -0.3 -0.5 -1 -3 -5 common emitter i /i =10 c b t a=100 c ta=25 c ta=- 25 c collector current i (ma) 0 c -0.2 0 base-emitter voltage v (v) be be c i - v -0.4 -0.6 -0.8 -1.0 -1.2 -10 -20 -30 -40 -50 common emitter v =-5v ce t a =100 c ta = 2 5 c ta = -25 c
1998. 6. 15 3/3 KTA1660 revision no : 1 collector-emitter voltage v (v) -1 c safe operating area ce collector current i (ma) -3 -10 -30 -100 -300 -1 -3 -5 -10 -30 -50 -100 -300 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature i max(pulse) c i max(continuous) c 100ms 500ms dc o pera t io n collector power dissipation p (w) c 0.2 20 0 ambient temperature ta ( c) pc - ta 40 60 80 100 120 140 160 0 0.4 0.6 0.8 1.0 1.2 1 mounted on ceramic substrate(250mm x0.8t) 2 ta=25 c 2 1 2
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